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Intel and IBM give Moore's Law a boost

Intel stated that it is will use two new materials to build the insulating walls and switching gates of its 45nm transistors. For its 45nm production, Intel will use a new material with a property called high-k for the transistor gate dielectric, and a new combination of metal materials for the transistor gate electrode. Intel Co-Founder Gordon Moore noted that the implementation of high-k and metal materials marks the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s.

IBM also announced that it has made a breakthrough in high-k metal gate development. Working with AMD, Sony and Toshiba, IBM said it has already inserted the technology into its semiconductor manufacturing line in East Fishkill, NY and it will also apply the technology into 45nm production starting in 2008.

Date: 2007-01-28 03:20 pm (UTC)
From: [identity profile] going-out.livejournal.com
Да. А я только что новую машину построил на 65-микронном C2D. После оверклокинга работает как зверь. Хорощо, впрочем, что 45-ые вроде бы должны на том же L775 работать.

Date: 2007-01-28 04:32 pm (UTC)
From: [identity profile] occuserpens.livejournal.com
Честно говоря, я даже не знаю, как размер транзистора можно выяснить, в обычных спексах я это не видел :)

Date: 2007-01-28 04:35 pm (UTC)
From: [identity profile] going-out.livejournal.com
Эта информация в куче описаний процессоров имеется.

Date: 2007-01-28 06:07 pm (UTC)
From: [identity profile] occuserpens.livejournal.com
Действительно, про Хеон пишут, что 64 нм процесс:
http://www.hothardware.com/viewarticle.aspx?articleid=845&cid=1

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